1. Sensor Specifications
Technology used | 6” planar CMOS process | |
Chip dimensions | 6.0 x 2.0 x 0.6 mm | |
Gate length | 100 µm | |
Gate width | 2000 µm | |
Devices per chip | ISFET + p-n diode | |
Sensing membrane | Si3N4 (ISFET) | TiO2 (EIS) |
ISFET | Vd = 300 mV, Id = 25 uA, Vth = 1.0-1.5 V | |
p-n diode | IForward = 200 uA |
Sensitivity, S | Si3N4 = 50 mV/pH | TiO2 = 58 mV/pH |
Linear range | 1 – 14 | |
Resolution | 0.02 pH | |
Accuracy | 0.01 pH (or 0.1%) | |
Response time to pH change | < 1 sec. (90%) | |
Operating Temp | 5 oC – 100oC | |
Stability | 0.1 pH/day (or 1%) |
ISFET | -1.76 mV/oC (pH = 7) | |
p-n diode | -2.3 mV/oC (pH = 7) |
Post on 2011-04-29 | View 3860
Brochure | |
Ion Sensitive Field-Effect Transistor - ISFET (2) |
Post on 2011-04-29 | View 3860