ION SENSITIVE FIELD-EFFECT TRANSISTOR - ISFET

 

1. Sensor Specifications

Physical specification

Technology used	6” planar CMOS process
Chip dimensions	6.0 x 2.0 x 0.6 mm
Gate length	100 µm
Gate width	2000 µm
Devices per chip	ISFET + p-n diode
Sensing membrane	Si3N4 (ISFET)	TiO2 (EIS)

 Electrical specification

ISFET	Vd = 300 mV, Id = 25 uA, Vth = 1.0-1.5 V
p-n diode	IForward = 200 uA

Chemical specification

Sensitivity, S	Si3N4 = 50 mV/pH	TiO2 = 58 mV/pH
Linear range	1 – 14
Resolution	0.02 pH
Accuracy	0.01 pH (or 0.1%)
Response time to pH change	< 1 sec. (90%)
Operating Temp	5 oC – 100oC
Stability	0.1 pH/day (or 1%)

 Temperature coefficient

ISFET	-1.76 mV/oC (pH = 7)
p-n diode	-2.3 mV/oC (pH = 7)

2. ISFET Sensor Advantages

- Sensor interfaces
- Bio-chemical sensitive FET
- Ultraminiature and low-power sensor Microsystems
- Medical diagnostic, environmental monitoring, and other industrial applications
- Other microfluidic or lab-on-a-chip applications

 

 

Post on 2011-04-29 | View 3858

 

 

Brochure
Ion Sensitive Field-Effect Transistor - ISFET (2)

 

 

Post on 2011-04-29 | View 3858