DETAILS

AN EXTREME CHANGE IN STRUCTURAL AND OPTICAL PROPERTIES OF INDIUM OXYNITRIDE DEPOSITED BY REACTIVE GAS-TIMING RF MAGNE

 

The indium oxynitride (InON) films were achieved by reactive RF magnetron sputtering indium target which has the purity of 99.999% with a novel reactive gas-timing technique. The structural, optical and electrical properties in a series of polycrystalline InON films affected by gas-timing of reactive N2 and O2 gases introduced to the chamber were observed. The X-ray photoelectron spectroscopy revealed that the oxygen content in thin films that compounded to indium and nitrogen, which increased from 10% in indiumnitride (InN) to 66% in indiumoxide (In2O3) films. The X-ray diffraction peaks show that the phase of deposited films changes from InN to InON and to In2O3 with an increasing oxygen timing. The hexagonal structure of InN films with predominant (0 0 2) and (0 0 4) orientation was observed when pure nitrogen is only used as sputtering gas, while InON and In2O3 seem to demonstrate body-center cubic polycrystalline structures depending on gas-timing. The surface morphologies investigated from atomic force microscope of deposited films with varying gas-timing of O2:N2 show indifferent. The numerical algorithm method was used to define the optical bandgap of films from transmittance results. The increasing oxygen gas-timing affects extremely to the change of crystallinity phase from InN to InON and to In2O3, the increase of optical bandgap from 1.4 to 3.4 eV and the rise of sheet resistance from 15 Ω/sq. to insulator.

 

 

Author editor

Post on 2009-06-14 | View 9157

 

 

pdf

OUR RESEARCH

OUR RESEARCH

High-dielectric constant AlON prepared by RF gas-timing sputtering for high capacitance density

Post on 2009-06-14

 

 

This paper presents the method to prepare and characterize high-dielectric constant aluminum oxynitride (AlON) formed by RF gas-timing sputtering. AlON layers of 725nm have been pr...

Details

 

Products

 

Services

 

Knowledge Center

 

Request Form