DETAILS

EXTRACTION OF DEFECT IN DOPING SILICON WAFER BY ANALYZING THE LIFETIME PROFILE METHOD

 

The total leakage current in silicon p-n junction diodes compatible with 0.8 μm CMOS technology is investigated. The generation lifetime is a key parameter for the leakage current, which can be obtained from the current-voltage (I-V) and the capacitance-voltage (C-V) characteristics. As will be shown, the electrically active defect from ion implantation process nerated in p-n junction can be extracted from the generation current density.

 

 

Author editor

Post on 2009-06-14 | View 17222

 

 

pdf

OUR RESEARCH

OUR RESEARCH

An extreme change in structural and optical properties of indium oxynitride deposited by reactive gas-timing RF magne

Post on 2009-06-14

 

 

The indium oxynitride (InON) films were achieved by reactive RF magnetron sputtering indium target which has the purity of 99.999% with a novel reactive gas-timing technique. The s...

Details

 

Products

 

Services

 

Knowledge Center

 

Request Form