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IMPROVING SENSITIVITY OF P-N JUNCTION TEMPERATURE SENSOR BY CARRIER LIFETIME MODIFICATION

 

This paper presents the relation between the staring cobalt thickness with carriergeneration lifetime, which effects to the sensitivity of p-n junction temperature sensor. The starting cobalt thickness of 12, 20 and 30nm have been used. The carrier generation lifetimes have been calculated from the reverse current-voltage (I-V) characteristics. The highest carrier generation lifetime has been obtained in the case of 12nm starting cobalt thickness. The highest sensitivity of p-n junction temperature sensor has also been observed from the case of 12nm starting cobalt thickness. The sensitivity has been calculated from the relation between leakage current versus temperature. The sensitivity of p-n junction temperature sensor can be improved by increasing carrier generation lifetime.

 

 

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Post on 2009-06-14 | View 18292

 

 

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Extraction of Defect in Doping Silicon Wafer by Analyzing the Lifetime Profile Method

Post on 2009-06-14

 

 

The total leakage current in silicon p-n junction diodes compatible with 0.8 μm CMOS technology is investigated. The generation lifetime is a key parameter for the leakage curre...

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