EXTRACTION OF DEFECT IN DOPING SILICON WAFER BY ANALYZING THE LIFETIME PROFILE METHOD

 

The total leakage current in silicon p-n junction diodes compatible with 0.8 μm CMOS technology is investigated. The generation lifetime is a key parameter for the leakage current, which can be obtained from the current-voltage (I-V) and the capacitance-voltage (C-V) characteristics. As will be shown, the electrically active defect from ion implantation process nerated in p-n junction can be extracted from the generation current density.

 

 

Author editor

Post on 2009-06-14 | View 21534