HOME arrow SUGGEST THIS SITE

SUGGEST THIS SITE

 

 

From

To

E-mail

E-mail

First Name

First Name

Last Name

Last Name

Message

Security Code

Copy the characters (respecting upper/lower case) from the image.
submit cancel

 

 

 

Top

Print this page | Send this page

OUR RESEARCH

OUR RESEARCH

High-dielectric constant AlON prepared by RF gas-timing sputtering for high capacitance density

Post on 2009-06-14

 

 

This paper presents the method to prepare and characterize high-dielectric constant aluminum oxynitride (AlON) formed by RF gas-timing sputtering. AlON layers of 725nm have been pr...

Details

 

Products

 

Services

 

Knowledge Center

 

Request Form