EDUCATION
To Improve Quality of Thai Personnel with Development and Settlement of Fundamental Knowledge
Personnel are the valuable national assets. Thus, another mission of ours is to develop the knowledge of people and to create professional personnel in terms of micro-electronics.
Hence, we have opened our center for the people who are interested or working in micro-electronics field can visit and learn about innovation and new technologies. This will enable all Thai personnel to get more understanding in science and technology.
In addition, TMEC also allows university students to be the trainees and to experience the actual work in the center in order to create new personnel in micro-electronics industry of Thailand.
Open House | |
We concentrate on not only the research and development on micro-electronics technology to pursue excellence of services and products, but also on the development of Thai personnel for the sake of proficiency and global standards. We have opened our center for everybody that is interested in micro-electronics technology and innovation. We also provide training course by our experts of micro-electronics technology to outside organizations. |
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More details | Open house form | |
Trainees | |
To allow university students to experience the actual operation of the center which can be useful for their careers in the future is another way to develop micro-electronics personnel of Thailand to meet international standards. Besides, the center also has the project whereby the experts of the center are assigned to supervise the trainees. In addition, we also have all tools and instruments that are prompt to be used in practice courses of all academic institutes in order to prepare new efficient personnel for Thai micro-electronics in the future. |
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More details | Trainee form |
OUR RESEARCH
High-dielectric constant AlON prepared by RF gas-timing sputtering for high capacitance density
This paper presents the method to prepare and characterize high-dielectric constant aluminum oxynitride (AlON) formed by RF gas-timing sputtering. AlON layers of 725nm have been pr...