EXTRACTION OF DEFECT IN DOPING SILICON WAFER BY ANALYZING THE LIFETIME PROFILE METHOD
The total leakage current in silicon p-n junction diodes compatible with 0.8 μm CMOS technology is investigated. The generation lifetime is a key parameter for the leakage current, which can be obtained from the current-voltage (I-V) and the capacitance-voltage (C-V) characteristics. As will be shown, the electrically active defect from ion implantation process nerated in p-n junction can be extracted from the generation current density.
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Post on 2009-06-14 | View 21542
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Improving Sensitivity of p-n Junction Temperature Sensor by Carrier Lifetime Modification
Post on 2009-06-14
This paper presents the relation between the staring cobalt thickness with carriergeneration lifetime, which effects to the sensitivity of p-n junction temperature sensor. The star...
