DETAILS

HIGH-DIELECTRIC CONSTANT ALON PREPARED BY RF GAS-TIMING SPUTTERING FOR HIGH CAPACITANCE DENSITY

 

This paper presents the method to prepare and characterize high-dielectric constant aluminum oxynitride (AlON) formed by RF gas-timing sputtering. AlON layers of 725nm have been prepared on metal–dielectric–metal structure with substrate temperature below 100 1C. Capacitance versus bias voltage has been measured. The dielectric constant of AlON has been calculated from the slope of the plot of capacitance versus capacitor area. The value of 11 has been obtained from this study. This depends on the composition of the AlON material, which is analyzed by Auger electron spectroscopy.

 

 

Author editor

Post on 2009-06-14 | View 21298

 

 

pdf

OUR RESEARCH

OUR RESEARCH

Extraction of Defect in Doping Silicon Wafer by Analyzing the Lifetime Profile Method

Post on 2009-06-14

 

 

The total leakage current in silicon p-n junction diodes compatible with 0.8 μm CMOS technology is investigated. The generation lifetime is a key parameter for the leakage curre...

Details

 

Products

 

Services

 

Knowledge Center

 

Request Form