ดร. นิภาพรรณ กลั่นเงิน
นักวิจัย
E-mail : nipapan.klunngienl@nectec.or.th
Telephone : +66 38 857-100 ext. 142
Roles and Responsibilities
ผู้ดูแลกระบวนการผลิตรวม
Research Interests
วัสดุที่มีความเป็นฉนวนสูง และตัวตรวจวัดความชื้น
Selected Publications
A. Poyai, E. Ratanaudomphisut, J. Supadech, N. Klunngien, C. Hruanan, and S. Sopitpan, "Effect of cobalt suicide to the sentivity of p-n junction temperature sensor," 5th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, ECTI-CON 2008, Krabi, 2008.
A. Poyai, E. Ratanaudomphisut, J. Supadech, N. Klunngien, C. Hruanan, and S. Sophitpan, "Improving sensitivity of p-n junction temperature sensor by carrier lifetime modification," Advanced Materials Research, 2008.
J. Woradet, T. Phetchakul, S. Chareankid, W. Pengchan, N. Klunngien, C. Hruanun, and A. Poyai, "Effect of base width and implantation dose on performance of 3-terminal magnetotransistor," 2007 International Symposium on Integrated Circuits, ISIC, Singapore, 2007.
R. Mahapatra, A. K. Chakraborty, N. Poolamai, A. Horsfall, S. Chattopadhyay, N. G. Wright, K. S. Coleman, P. G. Coleman, and C. P. Burrows, "Leakage current and charge trapping behavior in Ti O2 Si O2 high-k gate dielectric stack on 4H-SiC substrate," Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 25, pp. 217-223, 2007.
R. Mahapatra, N. Poolamai, S. Chattopadhyay, N. G. Wright, A. K. Chakraborty, K. S. Coleman, P. G. Coleman, and C. P. Burrows, "Characterization of thermally oxidized TiSi O2 gate dielectric stacks on 4H-SiC substrate," Applied Physics Letters, vol. 88, 2006.
R. Mahapatra, N. Poolamai, N. G. Wright, A. K. Chakraborty, K. S. Coleman, K. Das, S. K. Ray, P. G. Coleman, and C. P. Burrows, "Characteristics of thermally oxidized-Ti as a high-k gate dielectric on SiC metal-oxide-semiconductor devices," ECS Transactions, Los Angeles, CA, 2005.
N. G. Wright, N. Poolamai, K. V. Vassilevski, A. B. Horsfall, and C. M. Johnson, "Benefits of high-k dielectrics in 4H-SiC trench MOSFETs," Materials Science Forum, Lyon, 2004.
Post on 2009-06-11 | View 16257
OUR RESEARCH
High-dielectric constant AlON prepared by RF gas-timing sputtering for high capacitance density
This paper presents the method to prepare and characterize high-dielectric constant aluminum oxynitride (AlON) formed by RF gas-timing sputtering. AlON layers of 725nm have been pr...
