IMPROVING SENSITIVITY OF P-N JUNCTION TEMPERATURE SENSOR BY CARRIER LIFETIME MODIFICATION
This paper presents the relation between the staring cobalt thickness with carriergeneration lifetime, which effects to the sensitivity of p-n junction temperature sensor. The starting cobalt thickness of 12, 20 and 30nm have been used. The carrier generation lifetimes have been calculated from the reverse current-voltage (I-V) characteristics. The highest carrier generation lifetime has been obtained in the case of 12nm starting cobalt thickness. The highest sensitivity of p-n junction temperature sensor has also been observed from the case of 12nm starting cobalt thickness. The sensitivity has been calculated from the relation between leakage current versus temperature. The sensitivity of p-n junction temperature sensor can be improved by increasing carrier generation lifetime.
Author editor
Post on 2009-06-14 | View 21720
OUR RESEARCH
Oxygen Control on Nanocrystal-AlON Films by Reactive Gas-Timing Technique R.F. Magnetron Sputtering and Annealing Eff
The AlON films grown on Si(100) substrates by using radio frequency (r.f.) magnetron sputtering from high purity aluminum (99.999% Al) target with a novel reactive gas-timing techn...
